Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution

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Researchers

Research units

  • RAS - Ioffe Physico Technical Institute

Abstract

This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown α-GaN crystal and identifies an edge a-type threading dislocation (TD) using a confocal Raman 3-D imaging technique. These findings make possible the characterization of volumetric stress field and low TD density distributions over a large area on bulk α-GaN single crystal. The dislocation type effects on Raman shift are also discussed in detail (in order to identify the edge a-type and mixed a+c-type TDs, and theorize the invisibility of the screw c-type TDs). Authors are not aware of any previous reports using the confocal Raman 3-D imaging to identify the edge a-type and mixed a+c-type TDs.

Details

Original languageEnglish
Pages (from-to)47-54
Number of pages8
JournalJournal of Crystal Growth
Volume499
Publication statusPublished - 25 Jul 2018
MoE publication typeA1 Journal article-refereed

    Research areas

  • Confocal Raman spectroscopy, Three-dimensional (3-D) imaging, Stress distribution, Dislocation types, Bulk hexagonal GaN, Ammonothermal crystal growth

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