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This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown α-GaN crystal and identifies an edge a-type threading dislocation (TD) using a confocal Raman 3-D imaging technique. These findings make possible the characterization of volumetric stress field and low TD density distributions over a large area on bulk α-GaN single crystal. The dislocation type effects on Raman shift are also discussed in detail (in order to identify the edge a-type and mixed a+c-type TDs, and theorize the invisibility of the screw c-type TDs). Authors are not aware of any previous reports using the confocal Raman 3-D imaging to identify the edge a-type and mixed a+c-type TDs.
- Confocal Raman spectroscopy
- Three-dimensional (3-D) imaging
- Stress distribution
- Dislocation types
- Bulk hexagonal GaN
- Ammonothermal crystal growth
FingerprintDive into the research topics of 'Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution'. Together they form a unique fingerprint.
- 2 Finished
01/09/2016 → 31/08/2021
Project: Academy of Finland: Other research funding