Identifying threading dislocation types in ammonothermally grown bulk α-GaN by confocal Raman 3-D imaging of volumetric stress distribution

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Abstract

This study demonstrates all-optical Raman scattering study of dislocations in ammonothermally grown α-GaN crystal and identifies an edge a-type threading dislocation (TD) using a confocal Raman 3-D imaging technique. These findings make possible the characterization of volumetric stress field and low TD density distributions over a large area on bulk α-GaN single crystal. The dislocation type effects on Raman shift are also discussed in detail (in order to identify the edge a-type and mixed a+c-type TDs, and theorize the invisibility of the screw c-type TDs). Authors are not aware of any previous reports using the confocal Raman 3-D imaging to identify the edge a-type and mixed a+c-type TDs.
Original languageEnglish
Pages (from-to)47-54
Number of pages8
JournalJournal of Crystal Growth
Volume499
DOIs
Publication statusPublished - 25 Jul 2018
MoE publication typeA1 Journal article-refereed

Keywords

  • Confocal Raman spectroscopy
  • Three-dimensional (3-D) imaging
  • Stress distribution
  • Dislocation types
  • Bulk hexagonal GaN
  • Ammonothermal crystal growth

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  • Projects

    DeFaMe: Defect related failure mechanisms in III-N devices (DeFaMe)

    Suihkonen, S.

    01/09/201631/08/2021

    Project: Academy of Finland: Other research funding

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