Identification of the VAl-ON defect complex in AlN single crystals

J.-M. Mäki*, I. Makkonen, F. Tuomisto, A. Karjalainen, S. Suihkonen, J. Räisänen, T.Yu. Chemekova, Yu.N. Makarov

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

32 Citations (Scopus)
183 Downloads (Pure)

Abstract

In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown VAl-ON complexes in the concentration range 1018 cm-3 as the dominant form of VAl in the AlN single crystals, while isolated VAl were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves V Al. © 2011 American Physical Society.

Original languageEnglish
Article number081204
Pages (from-to)1_5
Number of pages4
JournalPhysical Review B
Volume84
Issue number8
DOIs
Publication statusPublished - 29 Aug 2011
MoE publication typeA1 Journal article-refereed

Keywords

  • absorption
  • AlN
  • positron
  • vacancy

Fingerprint Dive into the research topics of 'Identification of the VAl-ON defect complex in AlN single crystals'. Together they form a unique fingerprint.

  • Cite this