Abstract
We investigate the elastic properties of selected zinc-blende III-V semiconductors. Using hybrid functional density functional theory, we calculate the second- and third-order elastic constants and first- and second-order internal strain tensor components for Ga, In, and Al containing III-V compounds. For many of these parameters, there are no available experimental measurements, and this work is the first to predict their values. The stricter convergence criteria for the calculation of higher-order elastic constants are demonstrated, and arguments are made based on this for extracting these constants via the calculated stresses, rather than the energies, in the context of plane-wave-based calculations. The calculated elastic properties are used to determine the strain regime at which higher-order elasticity becomes important by comparing the stresses predicted by a lower- and a higher-order elasticity theory. Finally, the results are compared with available experimental literature data and previous theory.
Original language | English |
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Article number | 013604 |
Number of pages | 14 |
Journal | Physical Review Materials |
Volume | 3 |
Issue number | 1 |
DOIs | |
Publication status | Published - 10 Jan 2019 |
MoE publication type | A1 Journal article-refereed |
Keywords
- PRESSURE-DEPENDENCE
- STRUCTURAL-PROPERTIES
- CONSTANTS
- GAN
- DIAMOND
- ENERGY
- 1ST-PRINCIPLES
- COEFFICIENTS
- PARAMETER
- INN