Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix

Research output: Contribution to journalArticleScientificpeer-review

Standard

Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix. / Segercrantz, N.; Slotte, J.; Makkonen, I.; Tuomisto, F.; Sandall, I. C.; Ashwin, M.J.; Veal, T.D.

In: Journal of Physics D: Applied Physics, Vol. 50, No. 29, 295102, 03.07.2017, p. 1-6.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

APA

Vancouver

Author

Segercrantz, N. ; Slotte, J. ; Makkonen, I. ; Tuomisto, F. ; Sandall, I. C. ; Ashwin, M.J. ; Veal, T.D. / Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix. In: Journal of Physics D: Applied Physics. 2017 ; Vol. 50, No. 29. pp. 1-6.

Bibtex - Download

@article{11b608e34f1d4ea6b28a991f09500c9b,
title = "Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix",
abstract = "We study acceptor-type defects in GaSb1-xBix grown by molecular beam epitaxy. The hole density of the GaSb1-xBix layers, from capacitance-voltage measurements of Schottky diodes, is higher than that of the binary alloys and increases linearly up to 1019 cm-3 with the Bi content. Positron annihilation spectroscopy and ab initio calculations show that both Ga vacancies and Ga antisites contribute to the hole density and that the proportion of the two acceptor-type defects vary in the layers. The modification of the band gap due to Bi incorporation as well as the growth parameters are suggested to affect the concentrations of acceptor-type defects.",
keywords = "defects, GaSb, GaSbBi, positron annihilation spectroscopy",
author = "N. Segercrantz and J. Slotte and I. Makkonen and F. Tuomisto and Sandall, {I. C.} and M.J. Ashwin and T.D. Veal",
year = "2017",
month = "7",
day = "3",
doi = "10.1088/1361-6463/aa779a",
language = "English",
volume = "50",
pages = "1--6",
journal = "Journal of Physics D - Applied Physics",
issn = "0022-3727",
number = "29",

}

RIS - Download

TY - JOUR

T1 - Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix

AU - Segercrantz, N.

AU - Slotte, J.

AU - Makkonen, I.

AU - Tuomisto, F.

AU - Sandall, I. C.

AU - Ashwin, M.J.

AU - Veal, T.D.

PY - 2017/7/3

Y1 - 2017/7/3

N2 - We study acceptor-type defects in GaSb1-xBix grown by molecular beam epitaxy. The hole density of the GaSb1-xBix layers, from capacitance-voltage measurements of Schottky diodes, is higher than that of the binary alloys and increases linearly up to 1019 cm-3 with the Bi content. Positron annihilation spectroscopy and ab initio calculations show that both Ga vacancies and Ga antisites contribute to the hole density and that the proportion of the two acceptor-type defects vary in the layers. The modification of the band gap due to Bi incorporation as well as the growth parameters are suggested to affect the concentrations of acceptor-type defects.

AB - We study acceptor-type defects in GaSb1-xBix grown by molecular beam epitaxy. The hole density of the GaSb1-xBix layers, from capacitance-voltage measurements of Schottky diodes, is higher than that of the binary alloys and increases linearly up to 1019 cm-3 with the Bi content. Positron annihilation spectroscopy and ab initio calculations show that both Ga vacancies and Ga antisites contribute to the hole density and that the proportion of the two acceptor-type defects vary in the layers. The modification of the band gap due to Bi incorporation as well as the growth parameters are suggested to affect the concentrations of acceptor-type defects.

KW - defects

KW - GaSb

KW - GaSbBi

KW - positron annihilation spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85024384237&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/aa779a

DO - 10.1088/1361-6463/aa779a

M3 - Article

VL - 50

SP - 1

EP - 6

JO - Journal of Physics D - Applied Physics

JF - Journal of Physics D - Applied Physics

SN - 0022-3727

IS - 29

M1 - 295102

ER -

ID: 14465949