Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix

N. Segercrantz*, J. Slotte, I. Makkonen, F. Tuomisto, I. C. Sandall, M.J. Ashwin, T.D. Veal

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)
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Abstract

We study acceptor-type defects in GaSb1-xBix grown by molecular beam epitaxy. The hole density of the GaSb1-xBix layers, from capacitance-voltage measurements of Schottky diodes, is higher than that of the binary alloys and increases linearly up to 1019 cm-3 with the Bi content. Positron annihilation spectroscopy and ab initio calculations show that both Ga vacancies and Ga antisites contribute to the hole density and that the proportion of the two acceptor-type defects vary in the layers. The modification of the band gap due to Bi incorporation as well as the growth parameters are suggested to affect the concentrations of acceptor-type defects.

Original languageEnglish
Article number295102
Pages (from-to)1-6
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume50
Issue number29
DOIs
Publication statusPublished - 3 Jul 2017
MoE publication typeA1 Journal article-refereed

Keywords

  • defects
  • GaSb
  • GaSbBi
  • positron annihilation spectroscopy

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