Highly sensitive NO2 graphene sensor made on SiC grown in Ta crucible

S. Novikov; Yu N. Makarov; H. Helava; S. Lebedev; A. Lebedev; Valeri Davydov

doi:10.4028/www.scientific.net/MSF.858.1149

Highly sensitive NO₂ graphene sensor made on SiC grown in Ta crucible

S. Novikov, Yu N. Makarov, H. Helava, S. Lebedev, A. Lebedev, Valeri Davydov

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Graphene films were grown on SiC substrates by annealing in vacuum or in Ar flow. Gas sensors based on graphene films were made and tested on response to nitrogen dioxide. Graphene film is used in the sensor. The graphene film grown by annealing in Ar flow shows superior sensitivity compared to that annealed in vacuum. Both sensors exhibit good potential for environmental research and monitoring.

Original language	English
Title of host publication	Materials Science Forum
Editors	Fabrizio Roccaforte, Francesco La Via, Roberta Nipoti, Danilo Crippa, Filippo Giannazzo, Mario Saggio
Publisher	Trans Tech Publications
Pages	1149-1152
Number of pages	4
Volume	858
ISBN (Print)	9783035710427
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.858.1149
Publication status	Published - 2016
MoE publication type	A4 Conference publication
Event	International Conference on Silicon Carbide and Related Materials - Sicily, Italy Duration: 4 Oct 2015 → 9 Oct 2015 Conference number: 16

Publication series

Name	Materials Science Forum
Volume	858
ISSN (Print)	02555476
ISSN (Electronic)	1662-9752

Conference

Conference	International Conference on Silicon Carbide and Related Materials
Abbreviated title	ICSCRM
Country/Territory	Italy
City	Sicily
Period	04/10/2015 → 09/10/2015

Keywords

Graphene
Nitrogen dioxide
SiC

Access to Document

10.4028/www.scientific.net/MSF.858.1149

Cite this

Novikov, S., Makarov, Y. N., Helava, H., Lebedev, S., Lebedev, A., & Davydov, V. (2016). Highly sensitive NO₂ graphene sensor made on SiC grown in Ta crucible. In F. Roccaforte, F. La Via, R. Nipoti, D. Crippa, F. Giannazzo, & M. Saggio (Eds.), Materials Science Forum (Vol. 858, pp. 1149-1152). (Materials Science Forum; Vol. 858). Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/MSF.858.1149

@inproceedings{944d570c9f9c45e0bddee0011ad436bb,

title = "Highly sensitive NO2 graphene sensor made on SiC grown in Ta crucible",

abstract = "Graphene films were grown on SiC substrates by annealing in vacuum or in Ar flow. Gas sensors based on graphene films were made and tested on response to nitrogen dioxide. Graphene film is used in the sensor. The graphene film grown by annealing in Ar flow shows superior sensitivity compared to that annealed in vacuum. Both sensors exhibit good potential for environmental research and monitoring.",

keywords = "Graphene, Nitrogen dioxide, SiC",

author = "S. Novikov and Makarov, \{Yu N.\} and H. Helava and S. Lebedev and A. Lebedev and Valeri Davydov",

year = "2016",

doi = "10.4028/www.scientific.net/MSF.858.1149",

language = "English",

isbn = "9783035710427",

volume = "858",

series = "Materials Science Forum",

publisher = "Trans Tech Publications",

pages = "1149--1152",

editor = "Fabrizio Roccaforte and \{La Via\}, Francesco and Roberta Nipoti and Danilo Crippa and Filippo Giannazzo and Mario Saggio",

booktitle = "Materials Science Forum",

address = "Switzerland",

note = "International Conference on Silicon Carbide and Related Materials, ICSCRM ; Conference date: 04-10-2015 Through 09-10-2015",

}

Novikov, S, Makarov, YN, Helava, H, Lebedev, S, Lebedev, A & Davydov, V 2016, Highly sensitive NO₂ graphene sensor made on SiC grown in Ta crucible. in F Roccaforte, F La Via, R Nipoti, D Crippa, F Giannazzo & M Saggio (eds), Materials Science Forum. vol. 858, Materials Science Forum, vol. 858, Trans Tech Publications, pp. 1149-1152, International Conference on Silicon Carbide and Related Materials, Sicily, Italy, 04/10/2015. https://doi.org/10.4028/www.scientific.net/MSF.858.1149

Highly sensitive NO₂ graphene sensor made on SiC grown in Ta crucible. / Novikov, S.; Makarov, Yu N.; Helava, H. et al.
Materials Science Forum. ed. / Fabrizio Roccaforte; Francesco La Via; Roberta Nipoti; Danilo Crippa; Filippo Giannazzo; Mario Saggio. Vol. 858 Trans Tech Publications, 2016. p. 1149-1152 (Materials Science Forum; Vol. 858).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Highly sensitive NO2 graphene sensor made on SiC grown in Ta crucible

AU - Novikov, S.

AU - Makarov, Yu N.

AU - Helava, H.

AU - Lebedev, S.

AU - Lebedev, A.

AU - Davydov, Valeri

N1 - Conference code: 16

PY - 2016

Y1 - 2016

N2 - Graphene films were grown on SiC substrates by annealing in vacuum or in Ar flow. Gas sensors based on graphene films were made and tested on response to nitrogen dioxide. Graphene film is used in the sensor. The graphene film grown by annealing in Ar flow shows superior sensitivity compared to that annealed in vacuum. Both sensors exhibit good potential for environmental research and monitoring.

AB - Graphene films were grown on SiC substrates by annealing in vacuum or in Ar flow. Gas sensors based on graphene films were made and tested on response to nitrogen dioxide. Graphene film is used in the sensor. The graphene film grown by annealing in Ar flow shows superior sensitivity compared to that annealed in vacuum. Both sensors exhibit good potential for environmental research and monitoring.

KW - Graphene

KW - Nitrogen dioxide

KW - SiC

UR - https://www.scopus.com/pages/publications/84971518984

U2 - 10.4028/www.scientific.net/MSF.858.1149

DO - 10.4028/www.scientific.net/MSF.858.1149

M3 - Conference article in proceedings

AN - SCOPUS:84971518984

SN - 9783035710427

VL - 858

T3 - Materials Science Forum

SP - 1149

EP - 1152

BT - Materials Science Forum

A2 - Roccaforte, Fabrizio

A2 - La Via, Francesco

A2 - Nipoti, Roberta

A2 - Crippa, Danilo

A2 - Giannazzo, Filippo

A2 - Saggio, Mario

PB - Trans Tech Publications

T2 - International Conference on Silicon Carbide and Related Materials

Y2 - 4 October 2015 through 9 October 2015

ER -