Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

S.E.S. Andresen, F. Wu, R. Danneau, D. Gunnarsson, P. J. Hakonen

Research output: Contribution to journalArticleScientificpeer-review

13 Citations (Scopus)
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Abstract

We have investigated radio-frequency single-electron transistor operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At a temperature of 4.2 K and with a carrier frequency of 754.2 MHz, we reach a charge sensitivity of 2.3×10−6e/Hz⎯⎯⎯⎯⎯√ over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7×1013 Hz(3/2)/e, which is by one order of magnitude better than those for typical radio-frequency single-electron transistors.
Original languageEnglish
Article number033715
Pages (from-to)1-4
Number of pages4
JournalJournal of Applied Physics
Volume104
Issue number3
DOIs
Publication statusPublished - 2008
MoE publication typeA1 Journal article-refereed

Keywords

  • carbon nanotube
  • single-electron transistor (SET)

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