Highly individual SWCNTs for high performance thin film electronics

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Highly individual SWCNTs for high performance thin film electronics. / Kaskela, Antti; Laiho, Patrik; Fukaya, Norihiro; Mustonen, Kimmo; Susi, Toma; Jiang, Hua; Houbenov, Nikolay; Ohno, Yutaka; Kauppinen, Esko I.

In: Carbon, Vol. 103, 01.07.2016, p. 228-234.

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Kaskela A, Laiho P, Fukaya N, Mustonen K, Susi T, Jiang H et al. Highly individual SWCNTs for high performance thin film electronics. Carbon. 2016 Jul 1;103:228-234. https://doi.org/10.1016/j.carbon.2016.02.099

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Kaskela, Antti ; Laiho, Patrik ; Fukaya, Norihiro ; Mustonen, Kimmo ; Susi, Toma ; Jiang, Hua ; Houbenov, Nikolay ; Ohno, Yutaka ; Kauppinen, Esko I. / Highly individual SWCNTs for high performance thin film electronics. In: Carbon. 2016 ; Vol. 103. pp. 228-234.

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@article{bbb24292ff444b7c86fa0024b49bc194,
title = "Highly individual SWCNTs for high performance thin film electronics",
abstract = "We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90{\%} transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97{\%} transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.",
author = "Antti Kaskela and Patrik Laiho and Norihiro Fukaya and Kimmo Mustonen and Toma Susi and Hua Jiang and Nikolay Houbenov and Yutaka Ohno and Kauppinen, {Esko I.}",
year = "2016",
month = "7",
day = "1",
doi = "10.1016/j.carbon.2016.02.099",
language = "English",
volume = "103",
pages = "228--234",
journal = "Carbon",
issn = "0008-6223",

}

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TY - JOUR

T1 - Highly individual SWCNTs for high performance thin film electronics

AU - Kaskela, Antti

AU - Laiho, Patrik

AU - Fukaya, Norihiro

AU - Mustonen, Kimmo

AU - Susi, Toma

AU - Jiang, Hua

AU - Houbenov, Nikolay

AU - Ohno, Yutaka

AU - Kauppinen, Esko I.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.

AB - We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.

UR - http://www.scopus.com/inward/record.url?scp=84962786601&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2016.02.099

DO - 10.1016/j.carbon.2016.02.099

M3 - Article

VL - 103

SP - 228

EP - 234

JO - Carbon

JF - Carbon

SN - 0008-6223

ER -

ID: 3044840