Highly individual SWCNTs for high performance thin film electronics

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)228-234
Number of pages7
JournalCarbon
Volume103
Publication statusPublished - 1 Jul 2016
MoE publication typeA1 Journal article-refereed

Researchers

Research units

  • Nagoya University
  • University of Vienna

Abstract

We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.

ID: 3044840