Highly individual SWCNTs for high performance thin film electronics

Antti Kaskela; Patrik Laiho; Norihiro Fukaya; Kimmo Mustonen; Toma Susi; Hua Jiang; Nikolay Houbenov; Yutaka Ohno; Esko I. Kauppinen

doi:10.1016/j.carbon.2016.02.099

Highly individual SWCNTs for high performance thin film electronics

Antti Kaskela^*, Patrik Laiho, Norihiro Fukaya, Kimmo Mustonen, Toma Susi, Hua Jiang, Nikolay Houbenov, Yutaka Ohno, Esko I. Kauppinen

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

43 Citations (Scopus)

Abstract

We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm² V^-1s^-1 and ON/OFF-ratios up to 10⁶.

Original language	English
Pages (from-to)	228-234
Number of pages	7
Journal	Carbon
Volume	103
DOIs	https://doi.org/10.1016/j.carbon.2016.02.099
Publication status	Published - 1 Jul 2016
MoE publication type	A1 Journal article-refereed

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10.1016/j.carbon.2016.02.099

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title = "Highly individual SWCNTs for high performance thin film electronics",

abstract = "We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.",

author = "Antti Kaskela and Patrik Laiho and Norihiro Fukaya and Kimmo Mustonen and Toma Susi and Hua Jiang and Nikolay Houbenov and Yutaka Ohno and Kauppinen, {Esko I.}",

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T1 - Highly individual SWCNTs for high performance thin film electronics

AU - Kaskela, Antti

AU - Laiho, Patrik

AU - Fukaya, Norihiro

AU - Mustonen, Kimmo

AU - Susi, Toma

AU - Jiang, Hua

AU - Houbenov, Nikolay

AU - Ohno, Yutaka

AU - Kauppinen, Esko I.

PY - 2016/7/1

Y1 - 2016/7/1

N2 - We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.

AB - We report a continuous floating catalyst chemical vapor deposition synthesis of highly individual single-walled carbon nanotubes (SWCNT) for high performance transparent conducting films (TCF). Active feedback dilution of ferrocene-based catalyst vapor leads to an almost complete elimination of SWCNT bundling and a substantial increase in SWCNT lengths via the suppression of bundling-induced growth termination. The fabricated uniform TCFs exhibit sheet resistances of 89 Ω/sq. at 90% transmittance. This was further improved by micro-patterning, resulting in a sheet resistance of 69 Ω/sq. at 97% transmittance - the highest reported for any carbon nanotube TCF - and highly competitive with commercial indium-tin-oxide-TCFs. Furthermore, we demonstrate that thin film transistors fabricated from these highly individual SWCNTs reach charge carrier mobilities up to 100 cm2 V-1s-1 and ON/OFF-ratios up to 106.

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