High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

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High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning. / Jussila, Henri; Mattila, Päivi; Oksanen, J.; Perros, Alexander; Riikonen, Juha; Bosund, Markus; Varpula, Aapo; Huhtio, Teppo; Lipsanen, Harri; Sopanen, Markku.

In: Applied Physics Letters, Vol. 100, No. 7, 071606, 2012, p. 1-4.

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@article{e160de9cf86345f3957ffb99f7a9566d,
title = "High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning",
abstract = "This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.",
author = "Henri Jussila and P{\"a}ivi Mattila and J. Oksanen and Alexander Perros and Juha Riikonen and Markus Bosund and Aapo Varpula and Teppo Huhtio and Harri Lipsanen and Markku Sopanen",
year = "2012",
doi = "10.1063/1.3687199",
language = "English",
volume = "100",
pages = "1--4",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "7",

}

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TY - JOUR

T1 - High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

AU - Jussila, Henri

AU - Mattila, Päivi

AU - Oksanen, J.

AU - Perros, Alexander

AU - Riikonen, Juha

AU - Bosund, Markus

AU - Varpula, Aapo

AU - Huhtio, Teppo

AU - Lipsanen, Harri

AU - Sopanen, Markku

PY - 2012

Y1 - 2012

N2 - This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.

AB - This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.

UR - http://dx.doi.org/10.1063/1.3687199

U2 - 10.1063/1.3687199

DO - 10.1063/1.3687199

M3 - Article

VL - 100

SP - 1

EP - 4

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 071606

ER -

ID: 822986