High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • Beneq Oy
  • VTT Technical Research Centre of Finland

Abstract

This paper examines the utilization of plasma-enhanced atomic layer deposition grown AlN in the fabrication of a high-k insulator layer on GaAs. It is shown that high-k GaAs MIS capacitors with an unpinned Fermi level can be fabricated utilizing a thin ex-situ deposited AlN passivation layer. The illumination and temperature induced changes in the inversion side capacitance, and the maximum band bending of 1.2 eV indicates that the MIS capacitor reaches inversion. Removal of surface oxide is not required in contrast to many common ex-situ approaches.

Details

Original languageEnglish
Article number071606
Pages (from-to)1-4
Number of pages4
JournalApplied Physics Letters
Volume100
Issue number7
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

ID: 822986