High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching

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High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching. / Khan, Sabbir A.; Suyatin, Dmitry B.; Sundqvist, Jonas; Graczyk, Mariusz ; Junige, Marcel; Kauppinen, Christoffer; Kvennefors, Anders; Huffman, Maria; Maximov, Ivan.

In: ACS Applied Nano Materials, 2018.

Research output: Contribution to journalArticleScientificpeer-review

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Khan, SA, Suyatin, DB, Sundqvist, J, Graczyk, M, Junige, M, Kauppinen, C, Kvennefors, A, Huffman, M & Maximov, I 2018, 'High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching' ACS Applied Nano Materials. https://doi.org/10.1021/acsanm.8b00509

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Khan, Sabbir A. ; Suyatin, Dmitry B. ; Sundqvist, Jonas ; Graczyk, Mariusz ; Junige, Marcel ; Kauppinen, Christoffer ; Kvennefors, Anders ; Huffman, Maria ; Maximov, Ivan. / High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching. In: ACS Applied Nano Materials. 2018.

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@article{7ab3374558214bc7a549c6098b884bcc,
title = "High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching",
abstract = "Nanoimprint lithography (NIL) has the potential for low-cost and high-throughput nanoscale fabrication. However, the NIL quality and resolution are usually limited by the shape and size of the nanoimprint stamp features. Atomic layer etching (ALE) can provide a damage-free pattern transfer with ultimate etch control for features of all length scales, down to the atomic scale, and for all feature geometries, which is required for good quality and high-resolution nanoimprint stamp fabrication. Here, we present an ALE process for nanoscale pattern transfer and high-resolution nanoimprint stamp preparation. This ALE process is based on chemical adsorption of a monoatomic layer of dichloride (Cl2) on the silicon surface, followed by the removal of a monolayer of Cl2-modified silicon by argon bombardment. The nanopatterns of different geometries, loadings, and pitches were fabricated by electron beam lithography on a silicon wafer, and ALE was subsequently performed for pattern transfer using a resist as an etch mask. The post-ALE patterns allowed us to study the different effects and limitations of the process, such as trenching and sidewall tapering. The ALE-processed silicon wafers were used as hard nanoimprint stamps in a thermal nanoimprint process. Features as small as 30 nm were successfully transferred into a poly(methyl methacrylate) layer, which demonstrated the great potential of ALE in fabricating nanoimprint stamps with ultrahigh resolution.",
keywords = ": atomic layer etching (ALE), nanofeatures, nanoimprint lithography (NIL), nanopillar, pattern transfer",
author = "Khan, {Sabbir A.} and Suyatin, {Dmitry B.} and Jonas Sundqvist and Mariusz Graczyk and Marcel Junige and Christoffer Kauppinen and Anders Kvennefors and Maria Huffman and Ivan Maximov",
year = "2018",
doi = "10.1021/acsanm.8b00509",
language = "English",
journal = "ACS Applied Nano Materials",
issn = "2574-0970",
publisher = "AMERICAN CHEMICAL SOCIETY",

}

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TY - JOUR

T1 - High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching

AU - Khan, Sabbir A.

AU - Suyatin, Dmitry B.

AU - Sundqvist, Jonas

AU - Graczyk, Mariusz

AU - Junige, Marcel

AU - Kauppinen, Christoffer

AU - Kvennefors, Anders

AU - Huffman, Maria

AU - Maximov, Ivan

PY - 2018

Y1 - 2018

N2 - Nanoimprint lithography (NIL) has the potential for low-cost and high-throughput nanoscale fabrication. However, the NIL quality and resolution are usually limited by the shape and size of the nanoimprint stamp features. Atomic layer etching (ALE) can provide a damage-free pattern transfer with ultimate etch control for features of all length scales, down to the atomic scale, and for all feature geometries, which is required for good quality and high-resolution nanoimprint stamp fabrication. Here, we present an ALE process for nanoscale pattern transfer and high-resolution nanoimprint stamp preparation. This ALE process is based on chemical adsorption of a monoatomic layer of dichloride (Cl2) on the silicon surface, followed by the removal of a monolayer of Cl2-modified silicon by argon bombardment. The nanopatterns of different geometries, loadings, and pitches were fabricated by electron beam lithography on a silicon wafer, and ALE was subsequently performed for pattern transfer using a resist as an etch mask. The post-ALE patterns allowed us to study the different effects and limitations of the process, such as trenching and sidewall tapering. The ALE-processed silicon wafers were used as hard nanoimprint stamps in a thermal nanoimprint process. Features as small as 30 nm were successfully transferred into a poly(methyl methacrylate) layer, which demonstrated the great potential of ALE in fabricating nanoimprint stamps with ultrahigh resolution.

AB - Nanoimprint lithography (NIL) has the potential for low-cost and high-throughput nanoscale fabrication. However, the NIL quality and resolution are usually limited by the shape and size of the nanoimprint stamp features. Atomic layer etching (ALE) can provide a damage-free pattern transfer with ultimate etch control for features of all length scales, down to the atomic scale, and for all feature geometries, which is required for good quality and high-resolution nanoimprint stamp fabrication. Here, we present an ALE process for nanoscale pattern transfer and high-resolution nanoimprint stamp preparation. This ALE process is based on chemical adsorption of a monoatomic layer of dichloride (Cl2) on the silicon surface, followed by the removal of a monolayer of Cl2-modified silicon by argon bombardment. The nanopatterns of different geometries, loadings, and pitches were fabricated by electron beam lithography on a silicon wafer, and ALE was subsequently performed for pattern transfer using a resist as an etch mask. The post-ALE patterns allowed us to study the different effects and limitations of the process, such as trenching and sidewall tapering. The ALE-processed silicon wafers were used as hard nanoimprint stamps in a thermal nanoimprint process. Features as small as 30 nm were successfully transferred into a poly(methyl methacrylate) layer, which demonstrated the great potential of ALE in fabricating nanoimprint stamps with ultrahigh resolution.

KW - : atomic layer etching (ALE)

KW - nanofeatures

KW - nanoimprint lithography (NIL)

KW - nanopillar

KW - pattern transfer

U2 - 10.1021/acsanm.8b00509

DO - 10.1021/acsanm.8b00509

M3 - Article

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

SN - 2574-0970

ER -

ID: 21491089