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High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric
Marcus Rinkiö, Andreas Johansson*, Marina Y. Zavodchikova, J. Jussi Toppari, Albert G. Nasibulin, Esko I. Kauppinen, Päivi Törmä
*Corresponding author for this work
Research output: Contribution to journal › Article › Scientific › peer-review
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