High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

Marcus Rinkiö, Andreas Johansson*, Marina Y. Zavodchikova, J. Jussi Toppari, Albert G. Nasibulin, Esko I. Kauppinen, Päivi Törmä

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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Physics & Astronomy