High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress

T. Paskova; T. Suski; M. Bockowski; P. P. Paskov; V. Darakchieva; B. Monemar; F. Tuomisto; K. Saarinen; N. Ashkenov; M. Schubert; C. Roder; D. Hommel

doi:10.1557/PROC-831-E8.18

High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress

T. Paskova^*, T. Suski, M. Bockowski, P. P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, D. Hommel

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Abstract

The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.

Original language	English
Title of host publication	GaN, AIN, InN and Their Alloys
Editors	C Wetzel, B Gil, M Kuzuhara, M Manfra
Publisher	MATERIALS RESEARCH SOCIETY
Pages	429-434
Number of pages	6
ISBN (Print)	1-55899-779-2
DOIs	https://doi.org/10.1557/PROC-831-E8.18
Publication status	Published - 2005
MoE publication type	A4 Article in a conference publication
Event	Symposium on GaN, AIN, InN and Their Alloys - Boston, United States Duration: 29 Nov 2004 → 3 Dec 2004

Publication series

Name	MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
Publisher	MATERIALS RESEARCH SOCIETY
Volume	831
ISSN (Print)	0272-9172

Conference

Conference	Symposium on GaN, AIN, InN and Their Alloys
Country	United States
City	Boston
Period	29/11/2004 → 03/12/2004
Other	Held at the 2004 MRS Fall Meeting

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10.1557/PROC-831-E8.18

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Paskova, T., Suski, T., Bockowski, M., Paskov, P. P., Darakchieva, V., Monemar, B., Tuomisto, F., Saarinen, K., Ashkenov, N., Schubert, M., Roder, C., & Hommel, D. (2005). High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress. In C. Wetzel, B. Gil, M. Kuzuhara, & M. Manfra (Eds.), GaN, AIN, InN and Their Alloys (pp. 429-434). (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS; Vol. 831). MATERIALS RESEARCH SOCIETY. https://doi.org/10.1557/PROC-831-E8.18

Paskova, T. ; Suski, T. ; Bockowski, M. ; Paskov, P. P. ; Darakchieva, V. ; Monemar, B. ; Tuomisto, F. ; Saarinen, K. ; Ashkenov, N. ; Schubert, M. ; Roder, C. ; Hommel, D. / High pressure annealing of HVPE GaN free-standing films : Redistribution of defects and stress. GaN, AIN, InN and Their Alloys. editor / C Wetzel ; B Gil ; M Kuzuhara ; M Manfra. MATERIALS RESEARCH SOCIETY, 2005. pp. 429-434 (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS).

@inproceedings{4f2fea8d7d8943c1a9dd7d0be82b1666,

title = "High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress",

abstract = "The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.",

author = "T. Paskova and T. Suski and M. Bockowski and Paskov, {P. P.} and V. Darakchieva and B. Monemar and F. Tuomisto and K. Saarinen and N. Ashkenov and M. Schubert and C. Roder and D. Hommel",

year = "2005",

doi = "10.1557/PROC-831-E8.18",

language = "English",

isbn = "1-55899-779-2",

series = "MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS",

publisher = "MATERIALS RESEARCH SOCIETY",

pages = "429--434",

editor = "C Wetzel and B Gil and M Kuzuhara and M Manfra",

booktitle = "GaN, AIN, InN and Their Alloys",

address = "United States",

note = "Symposium on GaN, AIN, InN and Their Alloys ; Conference date: 29-11-2004 Through 03-12-2004",

}

Paskova, T, Suski, T, Bockowski, M, Paskov, PP, Darakchieva, V, Monemar, B, Tuomisto, F, Saarinen, K, Ashkenov, N, Schubert, M, Roder, C & Hommel, D 2005, High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress. in C Wetzel, B Gil, M Kuzuhara & M Manfra (eds), GaN, AIN, InN and Their Alloys. MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, vol. 831, MATERIALS RESEARCH SOCIETY, pp. 429-434, Symposium on GaN, AIN, InN and Their Alloys, Boston, United States, 29/11/2004. https://doi.org/10.1557/PROC-831-E8.18

High pressure annealing of HVPE GaN free-standing films : Redistribution of defects and stress. / Paskova, T.; Suski, T.; Bockowski, M.; Paskov, P. P.; Darakchieva, V.; Monemar, B.; Tuomisto, F.; Saarinen, K.; Ashkenov, N.; Schubert, M.; Roder, C.; Hommel, D.

GaN, AIN, InN and Their Alloys. ed. / C Wetzel; B Gil; M Kuzuhara; M Manfra. MATERIALS RESEARCH SOCIETY, 2005. p. 429-434 (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS; Vol. 831).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review

TY - GEN

T1 - High pressure annealing of HVPE GaN free-standing films

T2 - Symposium on GaN, AIN, InN and Their Alloys

AU - Paskova, T.

AU - Suski, T.

AU - Bockowski, M.

AU - Paskov, P. P.

AU - Darakchieva, V.

AU - Monemar, B.

AU - Tuomisto, F.

AU - Saarinen, K.

AU - Ashkenov, N.

AU - Schubert, M.

AU - Roder, C.

AU - Hommel, D.

PY - 2005

Y1 - 2005

N2 - The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.

AB - The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.

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U2 - 10.1557/PROC-831-E8.18

DO - 10.1557/PROC-831-E8.18

M3 - Conference contribution

AN - SCOPUS:23844478223

SN - 1-55899-779-2

T3 - MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

SP - 429

EP - 434

BT - GaN, AIN, InN and Their Alloys

A2 - Wetzel, C

A2 - Gil, B

A2 - Kuzuhara, M

A2 - Manfra, M

PB - MATERIALS RESEARCH SOCIETY

Y2 - 29 November 2004 through 3 December 2004

ER -

Paskova T, Suski T, Bockowski M, Paskov PP, Darakchieva V, Monemar B et al. High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress. In Wetzel C, Gil B, Kuzuhara M, Manfra M, editors, GaN, AIN, InN and Their Alloys. MATERIALS RESEARCH SOCIETY. 2005. p. 429-434. (MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS). https://doi.org/10.1557/PROC-831-E8.18

High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress

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