High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress

T. Paskova*, T. Suski, M. Bockowski, P. P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, D. Hommel

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.

Original languageEnglish
Title of host publicationGaN, AIN, InN and Their Alloys
EditorsC Wetzel, B Gil, M Kuzuhara, M Manfra
PublisherMATERIALS RESEARCH SOCIETY
Pages429-434
Number of pages6
ISBN (Print)1-55899-779-2
DOIs
Publication statusPublished - 2005
MoE publication typeA4 Article in a conference publication
EventSymposium on GaN, AIN, InN and Their Alloys - Boston, United States
Duration: 29 Nov 20043 Dec 2004

Publication series

NameMATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
PublisherMATERIALS RESEARCH SOCIETY
Volume831
ISSN (Print)0272-9172

Conference

ConferenceSymposium on GaN, AIN, InN and Their Alloys
CountryUnited States
CityBoston
Period29/11/200403/12/2004
OtherHeld at the 2004 MRS Fall Meeting

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