@inproceedings{4f2fea8d7d8943c1a9dd7d0be82b1666,
title = "High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress",
abstract = "The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.",
author = "T. Paskova and T. Suski and M. Bockowski and Paskov, {P. P.} and V. Darakchieva and B. Monemar and F. Tuomisto and K. Saarinen and N. Ashkenov and M. Schubert and C. Roder and D. Hommel",
year = "2005",
doi = "10.1557/PROC-831-E8.18",
language = "English",
isbn = "1-55899-779-2",
series = "MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS",
publisher = "MATERIALS RESEARCH SOCIETY",
pages = "429--434",
editor = "C Wetzel and B Gil and M Kuzuhara and M Manfra",
booktitle = "GaN, AIN, InN and Their Alloys",
address = "United States",
note = "Symposium on GaN, AIN, InN and Their Alloys ; Conference date: 29-11-2004 Through 03-12-2004",
}