@techreport{c65f0a385e844d25ba65a1b829a10bba,
title = "High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress",
keywords = "annealing, defects, freestanding GaN, high pressure, annealing, defects, freestanding GaN, high pressure, annealing, defects, freestanding GaN, high pressure",
author = "T. Paskova and T. Suski and M. Bockowski and P.P. Paskov and V. Darakchieva and B. Monemar and F. Tuomisto and K. Saarinen and N. Ashkenov and M. Schubert and C. Roder and D. Hommel",
year = "2005",
language = "English",
series = "2004 Materials Research Society Fall Meeting, Boston, November 29 - December 3, 2004",
pages = "E8.18",
type = "WorkingPaper",
}