High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress

T. Paskova, T. Suski, M. Bockowski, P.P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, D. Hommel

Research output: Working paperProfessional

Original languageEnglish
Publication statusPublished - 2005
MoE publication typeD4 Published development or research report or study

Publication series

Name2004 Materials Research Society Fall Meeting, Boston, November 29 - December 3, 2004


  • annealing
  • defects
  • freestanding GaN
  • high pressure

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