High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure

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High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. / Xue, Hui; Dai, Yunyun; Kim, Wonjae; Wang, Yadong; Bai, Xueyin; Qi, Mei; Halonen, Kari; Lipsanen, Harri; Sun, Zhipei.

In: Nanoscale, Vol. 11, No. 7, 21.02.2019, p. 3240-3247.

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@article{f138d4908e6947b0a8a79c12db635504,
title = "High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure",
abstract = "van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.",
author = "Hui Xue and Yunyun Dai and Wonjae Kim and Yadong Wang and Xueyin Bai and Mei Qi and Kari Halonen and Harri Lipsanen and Zhipei Sun",
note = "| openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/FP7/631610/EU//GrabFast",
year = "2019",
month = "2",
day = "21",
doi = "10.1039/c8nr09248f",
language = "English",
volume = "11",
pages = "3240--3247",
journal = "Nanoscale",
issn = "2040-3364",
number = "7",

}

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TY - JOUR

T1 - High photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure

AU - Xue, Hui

AU - Dai, Yunyun

AU - Kim, Wonjae

AU - Wang, Yadong

AU - Bai, Xueyin

AU - Qi, Mei

AU - Halonen, Kari

AU - Lipsanen, Harri

AU - Sun, Zhipei

N1 - | openaire: EC/H2020/820423/EU//S2QUIP | openaire: EC/FP7/631610/EU//GrabFast

PY - 2019/2/21

Y1 - 2019/2/21

N2 - van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

AB - van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe 2 /SnSe 2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W -1 and 4.4 × 10 10 Jones and those at 1550 nm are ∼80 A W -1 and 1.4 × 10 10 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

UR - http://www.scopus.com/inward/record.url?scp=85061561167&partnerID=8YFLogxK

U2 - 10.1039/c8nr09248f

DO - 10.1039/c8nr09248f

M3 - Article

VL - 11

SP - 3240

EP - 3247

JO - Nanoscale

JF - Nanoscale

SN - 2040-3364

IS - 7

ER -

ID: 32238128