High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy

J. Toivonen, T. Hakkarainen, M. Sopanen, H. Lipsanen

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    Original languageEnglish
    Title of host publicationThe Tenth International Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, Japan, June 5-9, 2000
    Pages188-189
    Publication statusPublished - 2000
    MoE publication typeA4 Article in a conference publication

    Keywords

    • dimethylhydrazine
    • GaAsN
    • MOVPE
    • photoluminescence
    • rapid thermal annealing

    Cite this

    Toivonen, J., Hakkarainen, T., Sopanen, M., & Lipsanen, H. (2000). High-nitrogen-composition GaNAs by atmospheric pressure metalorganic vapor phase epitaxy. In The Tenth International Conference on Metalorganic Vapor Phase Epitaxy, Sapporo, Japan, June 5-9, 2000 (pp. 188-189)