High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy

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Original languageEnglish
Pages (from-to)456-460
Number of pages5
JournalJournal of Crystal Growth
Volume221
Issue number1-4
Publication statusPublished - Dec 2000
MoE publication typeA1 Journal article-refereed

    Research areas

  • dimethylhydrazine, GaAsN, MOVPE, photoluminescence, rapid thermal annealing

ID: 4147195