High-index-contrast Optical Waveguides on Silicon

Antti Säynätjoki*, Sanna Arpiainen, Jouni Ahopelto, Harri Lipsanen

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

    3 Citations (Scopus)

    Abstract

    Optical waveguides with a high refractive index contrast were fabricated on silicon-on-insulator (SOI) and polysilicon. The attenuation of 2dB/cm was achieved for SOI, and 11 dB/cm for hydrogenated polysilicon waveguides. Unlike in SOI waveguides, where the main contribution to attenuation is due to the surface scattering, a significant part of attenuation in polysilicon originates from absorption and scattering in the material.

    Original languageEnglish
    Title of host publicationPhysics of Semiconductors, Parts A and B
    EditorsJ Menendez, CG VandeWalle
    PublisherAIP
    Pages1537-1538
    Number of pages2
    ISBN (Print)0735402574
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA4 Article in a conference publication
    EventInternational Conference on the Physics of Semiconductors - Flagstaff, United States
    Duration: 26 Jul 200430 Jul 2004
    Conference number: 27

    Publication series

    NameAIP Conference Proceedings
    PublisherAIP
    Volume772
    ISSN (Print)0094-243X

    Conference

    ConferenceInternational Conference on the Physics of Semiconductors
    Abbreviated titleICPS
    CountryUnited States
    CityFlagstaff
    Period26/07/200430/07/2004

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  • Cite this

    Säynätjoki, A., Arpiainen, S., Ahopelto, J., & Lipsanen, H. (2005). High-index-contrast Optical Waveguides on Silicon. In J. Menendez, & CG. VandeWalle (Eds.), Physics of Semiconductors, Parts A and B (pp. 1537-1538). (AIP Conference Proceedings ; Vol. 772). AIP. https://doi.org/10.1063/1.1994701