High-index-contrast Optical Waveguides on Silicon

Antti Säynätjoki; Sanna Arpiainen; Jouni Ahopelto; Harri Lipsanen

doi:10.1063/1.1994701

High-index-contrast Optical Waveguides on Silicon

Antti Säynätjoki^*, Sanna Arpiainen, Jouni Ahopelto, Harri Lipsanen

^*Corresponding author for this work

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

3 Citations (Scopus)

Abstract

Optical waveguides with a high refractive index contrast were fabricated on silicon-on-insulator (SOI) and polysilicon. The attenuation of 2dB/cm was achieved for SOI, and 11 dB/cm for hydrogenated polysilicon waveguides. Unlike in SOI waveguides, where the main contribution to attenuation is due to the surface scattering, a significant part of attenuation in polysilicon originates from absorption and scattering in the material.

Original language	English
Title of host publication	Physics of Semiconductors, Parts A and B
Editors	J Menendez, CG VandeWalle
Publisher	American Institute of Physics
Pages	1537-1538
Number of pages	2
ISBN (Print)	0735402574
DOIs	https://doi.org/10.1063/1.1994701
Publication status	Published - 2005
MoE publication type	A4 Conference publication
Event	International Conference on the Physics of Semiconductors - Flagstaff, United States Duration: 26 Jul 2004 → 30 Jul 2004 Conference number: 27

Publication series

Name	AIP Conference Proceedings
Publisher	AIP
Volume	772
ISSN (Print)	0094-243X

Conference

Conference	International Conference on the Physics of Semiconductors
Abbreviated title	ICPS
Country/Territory	United States
City	Flagstaff
Period	26/07/2004 → 30/07/2004

Access to Document

10.1063/1.1994701

Cite this

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title = "High-index-contrast Optical Waveguides on Silicon",

abstract = "Optical waveguides with a high refractive index contrast were fabricated on silicon-on-insulator (SOI) and polysilicon. The attenuation of 2dB/cm was achieved for SOI, and 11 dB/cm for hydrogenated polysilicon waveguides. Unlike in SOI waveguides, where the main contribution to attenuation is due to the surface scattering, a significant part of attenuation in polysilicon originates from absorption and scattering in the material.",

author = "Antti S{\"a}yn{\"a}tjoki and Sanna Arpiainen and Jouni Ahopelto and Harri Lipsanen",

year = "2005",

doi = "10.1063/1.1994701",

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Säynätjoki, A, Arpiainen, S, Ahopelto, J & Lipsanen, H 2005, High-index-contrast Optical Waveguides on Silicon. in J Menendez & CG VandeWalle (eds), Physics of Semiconductors, Parts A and B. AIP Conference Proceedings , vol. 772, American Institute of Physics, pp. 1537-1538, International Conference on the Physics of Semiconductors , Flagstaff, Arizona, United States, 26/07/2004. https://doi.org/10.1063/1.1994701

High-index-contrast Optical Waveguides on Silicon. / Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni et al.
Physics of Semiconductors, Parts A and B. ed. / J Menendez; CG VandeWalle. American Institute of Physics, 2005. p. 1537-1538 (AIP Conference Proceedings ; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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AU - Säynätjoki, Antti

AU - Arpiainen, Sanna

AU - Ahopelto, Jouni

AU - Lipsanen, Harri

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PY - 2005

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N2 - Optical waveguides with a high refractive index contrast were fabricated on silicon-on-insulator (SOI) and polysilicon. The attenuation of 2dB/cm was achieved for SOI, and 11 dB/cm for hydrogenated polysilicon waveguides. Unlike in SOI waveguides, where the main contribution to attenuation is due to the surface scattering, a significant part of attenuation in polysilicon originates from absorption and scattering in the material.

AB - Optical waveguides with a high refractive index contrast were fabricated on silicon-on-insulator (SOI) and polysilicon. The attenuation of 2dB/cm was achieved for SOI, and 11 dB/cm for hydrogenated polysilicon waveguides. Unlike in SOI waveguides, where the main contribution to attenuation is due to the surface scattering, a significant part of attenuation in polysilicon originates from absorption and scattering in the material.

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DO - 10.1063/1.1994701

M3 - Conference article in proceedings

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T3 - AIP Conference Proceedings

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BT - Physics of Semiconductors, Parts A and B

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High-index-contrast Optical Waveguides on Silicon

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