High-frequency rectification in graphene lateral p - N junctions

Yu B. Vasilyev; G. Yu Vasileva; S. Novikov; S. A. Tarasenko; S. N. Danilov; S. D. Ganichev

doi:10.1063/1.5013100

High-frequency rectification in graphene lateral p - N junctions

Yu B. Vasilyev, G. Yu Vasileva, S. Novikov, S. A. Tarasenko, S. N. Danilov, S. D. Ganichev

Department of Electronics and Nanoengineering

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.

Original language	English
Article number	041111
Journal	Applied Physics Letters
Volume	112
Issue number	4
DOIs	https://doi.org/10.1063/1.5013100
Publication status	Published - 22 Jan 2018
MoE publication type	A1 Journal article-refereed

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title = "High-frequency rectification in graphene lateral p - N junctions",

abstract = "We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.",

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AU - Novikov, S.

AU - Tarasenko, S. A.

AU - Danilov, S. N.

AU - Ganichev, S. D.

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AB - We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.

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