High-frequency rectification in graphene lateral p - N junctions

Yu B. Vasilyev, G. Yu Vasileva, S. Novikov, S. A. Tarasenko, S. N. Danilov, S. D. Ganichev

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions.

Original languageEnglish
Article number041111
JournalApplied Physics Letters
Volume112
Issue number4
DOIs
Publication statusPublished - 22 Jan 2018
MoE publication typeA1 Journal article-refereed

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