High energy passively Q-switched laser on a CMOS platform

Neetesh Singh; Jan Lorenzen; Milan Sinobad; Kai Wang; Andreas C. Liapis; Henry Frankis; Mahmoud A. Gaafar; Stefanie Haugg; Henry Francis; Jose Carreira; Michael Geiselmann; Tobias Herr; Jonathan Bradley; Zhipei Sun; Sonia M. Garcia-Blanco; Franz X. Kärtner

doi:10.1109/CLEO/EUROPE-EQEC57999.2023.10231957

High energy passively Q-switched laser on a CMOS platform

Neetesh Singh^*, Jan Lorenzen, Milan Sinobad, Kai Wang, Andreas C. Liapis, Henry Frankis, Mahmoud A. Gaafar, Stefanie Haugg, Henry Francis, Jose Carreira, Michael Geiselmann, Tobias Herr, Jonathan Bradley, Zhipei Sun, Sonia M. Garcia-Blanco, Franz X. Kärtner

^*Corresponding author for this work

Research output: Contribution to conference › Abstract › Scientific › peer-review

Abstract

High energy Q-switched lasers are highly desirable for various applications ranging from sensing, micromachining and medical applications especially in the long wavelength window (>1.8 µm). Such lasers are usually based on large benchtop solid-state or fibre systems. Integrated rare-earth doped medium [1-5] has been an excellent candidate for high energy pulse generation with high beam quality. In this work, we show CMOS compatible Q-switched laser around 1.9 µm with an on-chip output energy over 150 nJ in a footprint <10 mm². The pulse energy demonstrated in this work is comparable to passively Q-switched fibre lasers [6].

Original language	English
DOIs	https://doi.org/10.1109/CLEO/EUROPE-EQEC57999.2023.10231957
Publication status	Published - 2023
MoE publication type	Not Eligible
Event	European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference - Munich, Germany Duration: 26 Jun 2023 → 30 Jun 2023

Conference

Conference	European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference
Abbreviated title	CLEO/Europe-EQEC 2023
Country/Territory	Germany
City	Munich
Period	26/06/2023 → 30/06/2023

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10.1109/CLEO/EUROPE-EQEC57999.2023.10231957

Cite this

Singh, N., Lorenzen, J., Sinobad, M., Wang, K., Liapis, A. C., Frankis, H., Gaafar, M. A., Haugg, S., Francis, H., Carreira, J., Geiselmann, M., Herr, T., Bradley, J., Sun, Z., Garcia-Blanco, S. M., & Kärtner, F. X. (2023). High energy passively Q-switched laser on a CMOS platform. Abstract from European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Germany. https://doi.org/10.1109/CLEO/EUROPE-EQEC57999.2023.10231957

@conference{64e03bc9cf5a4034b0cd527c0d27b22e,

title = "High energy passively Q-switched laser on a CMOS platform",

abstract = "High energy Q-switched lasers are highly desirable for various applications ranging from sensing, micromachining and medical applications especially in the long wavelength window (>1.8 µm). Such lasers are usually based on large benchtop solid-state or fibre systems. Integrated rare-earth doped medium [1-5] has been an excellent candidate for high energy pulse generation with high beam quality. In this work, we show CMOS compatible Q-switched laser around 1.9 µm with an on-chip output energy over 150 nJ in a footprint <10 mm2. The pulse energy demonstrated in this work is comparable to passively Q-switched fibre lasers [6].",

author = "Neetesh Singh and Jan Lorenzen and Milan Sinobad and Kai Wang and Liapis, {Andreas C.} and Henry Frankis and Gaafar, {Mahmoud A.} and Stefanie Haugg and Henry Francis and Jose Carreira and Michael Geiselmann and Tobias Herr and Jonathan Bradley and Zhipei Sun and Garcia-Blanco, {Sonia M.} and K{\"a}rtner, {Franz X.}",

note = "Funding: EU Horizon 2020 Framework Programme - Grant Agreement No.: 965124 Femtochip and Deutsche Forschungsgemeinschaft (SP2111) contract PACE:Ka908/10-1. | openaire: EC/H2020/965124/EU//FEMTOCHIP; European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, CLEO/Europe-EQEC 2023 ; Conference date: 26-06-2023 Through 30-06-2023",

year = "2023",

doi = "10.1109/CLEO/EUROPE-EQEC57999.2023.10231957",

language = "English",

}

Singh, N, Lorenzen, J, Sinobad, M, Wang, K, Liapis, AC, Frankis, H, Gaafar, MA, Haugg, S, Francis, H, Carreira, J, Geiselmann, M, Herr, T, Bradley, J, Sun, Z, Garcia-Blanco, SM & Kärtner, FX 2023, 'High energy passively Q-switched laser on a CMOS platform', European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, Munich, Germany, 26/06/2023 - 30/06/2023. https://doi.org/10.1109/CLEO/EUROPE-EQEC57999.2023.10231957

TY - CONF

T1 - High energy passively Q-switched laser on a CMOS platform

AU - Singh, Neetesh

AU - Lorenzen, Jan

AU - Sinobad, Milan

AU - Wang, Kai

AU - Liapis, Andreas C.

AU - Frankis, Henry

AU - Gaafar, Mahmoud A.

AU - Haugg, Stefanie

AU - Francis, Henry

AU - Carreira, Jose

AU - Geiselmann, Michael

AU - Herr, Tobias

AU - Bradley, Jonathan

AU - Sun, Zhipei

AU - Garcia-Blanco, Sonia M.

AU - Kärtner, Franz X.

N1 - Funding: EU Horizon 2020 Framework Programme - Grant Agreement No.: 965124 Femtochip and Deutsche Forschungsgemeinschaft (SP2111) contract PACE:Ka908/10-1. | openaire: EC/H2020/965124/EU//FEMTOCHIP

PY - 2023

Y1 - 2023

N2 - High energy Q-switched lasers are highly desirable for various applications ranging from sensing, micromachining and medical applications especially in the long wavelength window (>1.8 µm). Such lasers are usually based on large benchtop solid-state or fibre systems. Integrated rare-earth doped medium [1-5] has been an excellent candidate for high energy pulse generation with high beam quality. In this work, we show CMOS compatible Q-switched laser around 1.9 µm with an on-chip output energy over 150 nJ in a footprint <10 mm2. The pulse energy demonstrated in this work is comparable to passively Q-switched fibre lasers [6].

AB - High energy Q-switched lasers are highly desirable for various applications ranging from sensing, micromachining and medical applications especially in the long wavelength window (>1.8 µm). Such lasers are usually based on large benchtop solid-state or fibre systems. Integrated rare-earth doped medium [1-5] has been an excellent candidate for high energy pulse generation with high beam quality. In this work, we show CMOS compatible Q-switched laser around 1.9 µm with an on-chip output energy over 150 nJ in a footprint <10 mm2. The pulse energy demonstrated in this work is comparable to passively Q-switched fibre lasers [6].

UR - http://www.scopus.com/inward/record.url?scp=85175709258&partnerID=8YFLogxK

U2 - 10.1109/CLEO/EUROPE-EQEC57999.2023.10231957

DO - 10.1109/CLEO/EUROPE-EQEC57999.2023.10231957

M3 - Abstract

AN - SCOPUS:85175709258

T2 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference

Y2 - 26 June 2023 through 30 June 2023

ER -

High energy passively Q-switched laser on a CMOS platform

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High energy passively Q-switched laser on a CMOS platform

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