High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

Pinki Pal, Bhupesh Bhardwaj, Robin Dahiya, Sami Suihkonen, Jori Lemettinen, Apurba Laha, Dinesh Kabra, Suddhasatta Mahapatra

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity of 4.93x1014 Jones, for bias voltages exceeding VB = 14 V. The high detectivity is obtained due to extremely low dark current ( pA, even for VB = 40 V), and high responsivity, in the wavelength range of 320 nm - 380 nm. The highest responsivity obtained for the measured devices is 255 A/W, at VB = 50 V and excitation wavelength of 353 nm.

Original languageEnglish
Title of host publication2022 IEEE International Conference on Emerging Electronics, ICEE 2022
PublisherIEEE
ISBN (Electronic)978-1-6654-9185-3
DOIs
Publication statusPublished - 2022
MoE publication typeA4 Conference publication
EventIEEE International Conference on Emerging Electronics - Bangalore, India
Duration: 11 Dec 202214 Dec 2022

Conference

ConferenceIEEE International Conference on Emerging Electronics
Abbreviated titleICEE
Country/TerritoryIndia
CityBangalore
Period11/12/202214/12/2022

Keywords

  • GaN
  • Schottky contacts
  • UV Photodetector

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