Growth temperature dependence of the electrical and structural properties of epitaxial graphene on SiC (0001)

E. Vesapuisto, W. Kim, S. Novikov, H. Lipsanen, P. Kuivalainen

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Original language	English
Pages (from-to)	1908-1914
Number of pages	7
Journal	PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS
Volume	248
Issue number	8
DOIs	https://doi.org/10.1002/pssb.201046368
Publication status	Published - Aug 2011
MoE publication type	A1 Journal article-refereed

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title = "Growth temperature dependence of the electrical and structural properties of epitaxial graphene on SiC (0001)",

author = "E. Vesapuisto and W. Kim and S. Novikov and H. Lipsanen and P. Kuivalainen",

year = "2011",

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language = "English",

volume = "248",

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T1 - Growth temperature dependence of the electrical and structural properties of epitaxial graphene on SiC (0001)

AU - Vesapuisto, E.

AU - Kim, W.

AU - Novikov, S.

AU - Lipsanen, H.

AU - Kuivalainen, P.

PY - 2011/8

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U2 - 10.1002/pssb.201046368

DO - 10.1002/pssb.201046368

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VL - 248

SP - 1908

EP - 1914

JO - PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS

JF - PHYSICA STATUS SOLIDI B: BASIC SOLID STATE PHYSICS

SN - 0370-1972

IS - 8

ER -