Growth of Silicon Carbide on (100) Silicon Substrates by Molecular Beam Epitaxy

V.-M. Airaksinen, J. Kaitila, H. Niemi, J. Lahtinen, J. Saarilehti

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)205-207
JournalPhysica Scripta
VolumeT54
Publication statusPublished - 1994
MoE publication typeA1 Journal article-refereed

Keywords

  • atomic force microscopy
  • molecular beam epitaxy
  • reflection high energy electron diffraction
  • Rutherford backscattering spectroscopy
  • silicon carbide
  • x-ray photoemission spectroscopy

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