Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

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Details

Original languageEnglish
Article number11160
Pages (from-to)1-8
JournalNature Communications
Volume7
Publication statusPublished - 30 Mar 2016
MoE publication typeA1 Journal article-refereed

Researchers

  • Feng Zhang
  • Peng Xiang Hou
  • Chang Liu
  • Bing Wei Wang
  • Hua Jiang

  • Mao Lin Chen
  • Dong Ming Sun
  • Jin Cheng Li
  • Hong Tao Cong
  • Esko Kauppinen

  • Hui Ming Cheng

Research units

  • Institute of Metal Research Chinese Academy of Sciences
  • King Abdulaziz University

Abstract

The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6 ]3- precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of > 95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ~ .08 eV and show excellent thin-film transistor performance.

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