Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy

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Standard

Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy. / Hakkarainen, T.; Toivonen, J.; Sopanen, M.; Lipsanen, H.

2002. (14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002).

Research output: Working paperProfessional

Harvard

Hakkarainen, T, Toivonen, J, Sopanen, M & Lipsanen, H 2002 'Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy' 14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002.

APA

Hakkarainen, T., Toivonen, J., Sopanen, M., & Lipsanen, H. (2002). Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy. (14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002).

Vancouver

Hakkarainen T, Toivonen J, Sopanen M, Lipsanen H. Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy. 2002. (14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002).

Author

Hakkarainen, T. ; Toivonen, J. ; Sopanen, M. ; Lipsanen, H. / Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy. 2002. (14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002).

Bibtex - Download

@techreport{afe8ab710e6c424a8929cd0c11cc8987,
title = "Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy",
keywords = "compound semiconductor, diluted nitride, metal-organic vapor phase epitaxy, compound semiconductor, diluted nitride, metal-organic vapor phase epitaxy, compound semiconductor, diluted nitride, metal-organic vapor phase epitaxy",
author = "T. Hakkarainen and J. Toivonen and M. Sopanen and H. Lipsanen",
year = "2002",
language = "English",
series = "14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002",
type = "WorkingPaper",

}

RIS - Download

TY - UNPB

T1 - Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy

AU - Hakkarainen, T.

AU - Toivonen, J.

AU - Sopanen, M.

AU - Lipsanen, H.

PY - 2002

Y1 - 2002

KW - compound semiconductor

KW - diluted nitride

KW - metal-organic vapor phase epitaxy

KW - compound semiconductor

KW - diluted nitride

KW - metal-organic vapor phase epitaxy

KW - compound semiconductor

KW - diluted nitride

KW - metal-organic vapor phase epitaxy

M3 - Working paper

T3 - 14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002

BT - Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy

ER -

ID: 4131730