Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy

Research output: Working paperProfessional

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Original languageEnglish
Publication statusPublished - 2002
MoE publication typeD4 Published development or research report or study

Publication series

Name14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002

    Research areas

  • compound semiconductor, diluted nitride, metal-organic vapor phase epitaxy

ID: 4131730