Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy

T. Hakkarainen, J. Toivonen, M. Sopanen, H. Lipsanen

    Research output: Working paperProfessional

    1 Citation (Scopus)
    Original languageEnglish
    Publication statusPublished - 2002
    MoE publication typeD4 Published development or research report or study

    Publication series

    Name14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002

    Keywords

    • compound semiconductor
    • diluted nitride
    • metal-organic vapor phase epitaxy

    Cite this

    Hakkarainen, T., Toivonen, J., Sopanen, M., & Lipsanen, H. (2002). Growth of self-assembled GaIn(N)As quantum dots by atmospheric pressure metal-organic vapor phase epitaxy. (14th International Conference on Indium Phosphide and Related Materials (IPRM 2002), Stockholm, Sweden, May 12-16, 2002).