Growth of InN by vertical flow MOVPE

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Growth of InN by vertical flow MOVPE. / Suihkonen, S.; Sormunen, J.; Rangel-Kuoppa, V.T.; Koskenvaara, H.; Sopanen, Markku.

In: Journal of Crystal Growth, Vol. 291, No. 1, 15.05.2006, p. 8-11.

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Suihkonen, S, Sormunen, J, Rangel-Kuoppa, VT, Koskenvaara, H & Sopanen, M 2006, 'Growth of InN by vertical flow MOVPE', Journal of Crystal Growth, vol. 291, no. 1, pp. 8-11. https://doi.org/10.1016/j.jcrysgro.2006.02.022

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Suihkonen, S. ; Sormunen, J. ; Rangel-Kuoppa, V.T. ; Koskenvaara, H. ; Sopanen, Markku. / Growth of InN by vertical flow MOVPE. In: Journal of Crystal Growth. 2006 ; Vol. 291, No. 1. pp. 8-11.

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@article{382ed2fdb3934588a4f6d313bf49dac6,
title = "Growth of InN by vertical flow MOVPE",
abstract = "InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH3, and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 °C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 °C. {\circledC} 2006 Elsevier B.V. All rights reserved.",
keywords = "A3. Metalorganic chemical vapour deposition, B1. Indium nitride, B2. Semiconducting III-V materials",
author = "S. Suihkonen and J. Sormunen and V.T. Rangel-Kuoppa and H. Koskenvaara and Markku Sopanen",
year = "2006",
month = "5",
day = "15",
doi = "10.1016/j.jcrysgro.2006.02.022",
language = "English",
volume = "291",
pages = "8--11",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

RIS - Download

TY - JOUR

T1 - Growth of InN by vertical flow MOVPE

AU - Suihkonen, S.

AU - Sormunen, J.

AU - Rangel-Kuoppa, V.T.

AU - Koskenvaara, H.

AU - Sopanen, Markku

PY - 2006/5/15

Y1 - 2006/5/15

N2 - InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH3, and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 °C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 °C. © 2006 Elsevier B.V. All rights reserved.

AB - InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH3, and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 °C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 °C. © 2006 Elsevier B.V. All rights reserved.

KW - A3. Metalorganic chemical vapour deposition

KW - B1. Indium nitride

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=33749335220&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.02.022

DO - 10.1016/j.jcrysgro.2006.02.022

M3 - Article

VL - 291

SP - 8

EP - 11

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -

ID: 3569506