Growth of InN by vertical flow MOVPE

S. Suihkonen*, J. Sormunen, V.T. Rangel-Kuoppa, H. Koskenvaara, Markku Sopanen

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    31 Citations (Scopus)

    Abstract

    InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH3, and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 °C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 °C. © 2006 Elsevier B.V. All rights reserved.

    Original languageEnglish
    Pages (from-to)8-11
    Number of pages4
    JournalJournal of Crystal Growth
    Volume291
    Issue number1
    DOIs
    Publication statusPublished - 15 May 2006
    MoE publication typeA1 Journal article-refereed

    Keywords

    • A3. Metalorganic chemical vapour deposition
    • B1. Indium nitride
    • B2. Semiconducting III-V materials

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