Growth of high-quality GaSb by metalorganic vapor phase epitaxy.

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Original languageEnglish
Pages (from-to)1691-1696
Number of pages6
JournalJournal of Electronic Materials
Volume24
Issue number11
Publication statusPublished - Nov 1995
MoE publication typeA1 Journal article-refereed

    Research areas

  • gallium antimonide, metalorganic vapour phase epitaxy

ID: 4929697