Growth of high-quality GaSb by metalorganic vapor phase epitaxy.

M. Sopanen, T. Koljonen, H. Lipsanen, T. Tuomi

    Research output: Contribution to journalArticleScientificpeer-review

    17 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)1691-1696
    Number of pages6
    JournalJournal of Electronic Materials
    Volume24
    Issue number11
    DOIs
    Publication statusPublished - Nov 1995
    MoE publication typeA1 Journal article-refereed

    Keywords

    • gallium antimonide, metalorganic vapour phase epitaxy

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