Growth of CuS thin films by atomic layer epitaxy as material for gas sensors

J. Johansson, J. Kostamo, L. Niinistö

    Research output: Working paperProfessional

    Original languageEnglish
    Pages31
    Publication statusPublished - 2000
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameFinnish Chemical Congress and Exhibition, Helsinki, Finland, November 15-17., 2000.
    PublisherThe Association of Finnish Chemical Societies

    Keywords

    • ammonia
    • atomic layer epitaxy
    • porous silicon
    • solid state gas sensor

    Cite this