Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y layers on GaSb by liquid phase epitaxy

T. Koljonen, M. Taskinen

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo
Pages	30-32
Publication status	Published - 1994
MoE publication type	D4 Published development or research report or study

Name	Optoelectronics Laboratory, Annual Report 1993
Publisher	TKK
No.	TKK-F-C160

Keywords

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title = "Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y layers on GaSb by liquid phase epitaxy",

keywords = "liquid phase epitaxy, AlGaSb, AlGaAsSb, liquid phase epitaxy, AlGaSb, AlGaAsSb, liquid phase epitaxy, AlGaSb, AlGaAsSb",

author = "T. Koljonen and M. Taskinen",

year = "1994",

language = "English",

series = "Optoelectronics Laboratory, Annual Report 1993",

publisher = "TKK",

number = "TKK-F-C160",

pages = "30--32",

type = "WorkingPaper",

institution = "TKK",

}

TY - UNPB

T1 - Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y layers on GaSb by liquid phase epitaxy

AU - Koljonen, T.

AU - Taskinen, M.

PY - 1994

Y1 - 1994

KW - liquid phase epitaxy, AlGaSb, AlGaAsSb

M3 - Working paper

T3 - Optoelectronics Laboratory, Annual Report 1993

SP - 30

EP - 32

BT - Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y layers on GaSb by liquid phase epitaxy

CY - Espoo

ER -