Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources

T. Koljonen, M. Sopanen, H. Lipsanen, T. Tuomi

Research output: Working paper › Professional

Original language	English
Place of Publication	Espoo
Pages	15-16
Publication status	Published - 1994
MoE publication type	D4 Published development or research report or study

Name	Optoelectronics Laboratory, Annual Report 1993
Publisher	TKK
No.	TKK-F-C160

Keywords

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title = "Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources",

keywords = "GaSb, metalorganic vapour phase epitaxy, GaSb, metalorganic vapour phase epitaxy, GaSb, metalorganic vapour phase epitaxy",

author = "T. Koljonen and M. Sopanen and H. Lipsanen and T. Tuomi",

year = "1994",

language = "English",

series = "Optoelectronics Laboratory, Annual Report 1993",

publisher = "TKK",

number = "TKK-F-C160",

pages = "15--16",

type = "WorkingPaper",

institution = "TKK",

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TY - UNPB

T1 - Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources

AU - Koljonen, T.

AU - Sopanen, M.

AU - Lipsanen, H.

AU - Tuomi, T.

PY - 1994

Y1 - 1994

KW - GaSb, metalorganic vapour phase epitaxy

M3 - Working paper

T3 - Optoelectronics Laboratory, Annual Report 1993

SP - 15

EP - 16

BT - Growth of AlxGa1-xSb and AlxGa1-xAsySb1-y epilayers on GaSb substrates using all-organometallic sources

CY - Espoo

ER -