Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)

Abuduwayiti Aierken, Teppo Hakkarainen, Jouni Tiilikainen, Marco Mattila, Juha Riikonen, Markku Sopanen, Harri Lipsanen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)18-24
    Number of pages7
    JournalJournal of Crystal Growth
    Volume309
    Issue number1
    DOIs
    Publication statusPublished - 1 Nov 2007
    MoE publication typeA1 Journal article-refereed

    Keywords

    • GaAs (110)
    • MOVPE
    • near-surface quantum well
    • surface passivation

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