Growth and properties of self-catalyzed (In,Mn)As nanowires

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Growth and properties of self-catalyzed (In,Mn)As nanowires. / Bouravleuv, Alexei; Cirlin, George; Reznik, Rodion; Khrebtov, Artem; Samsonenko, Yuriy; Werner, Peter; Soshnikov, Ilya; Savin, Alexander; Lipsanen, Harri.

In: PHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS, Vol. 10, No. 7, 01.07.2016, p. 554-557.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Bouravleuv, A, Cirlin, G, Reznik, R, Khrebtov, A, Samsonenko, Y, Werner, P, Soshnikov, I, Savin, A & Lipsanen, H 2016, 'Growth and properties of self-catalyzed (In,Mn)As nanowires' PHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS, vol. 10, no. 7, pp. 554-557. https://doi.org/10.1002/pssr.201600097

APA

Bouravleuv, A., Cirlin, G., Reznik, R., Khrebtov, A., Samsonenko, Y., Werner, P., ... Lipsanen, H. (2016). Growth and properties of self-catalyzed (In,Mn)As nanowires. PHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS, 10(7), 554-557. https://doi.org/10.1002/pssr.201600097

Vancouver

Bouravleuv A, Cirlin G, Reznik R, Khrebtov A, Samsonenko Y, Werner P et al. Growth and properties of self-catalyzed (In,Mn)As nanowires. PHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS. 2016 Jul 1;10(7):554-557. https://doi.org/10.1002/pssr.201600097

Author

Bouravleuv, Alexei ; Cirlin, George ; Reznik, Rodion ; Khrebtov, Artem ; Samsonenko, Yuriy ; Werner, Peter ; Soshnikov, Ilya ; Savin, Alexander ; Lipsanen, Harri. / Growth and properties of self-catalyzed (In,Mn)As nanowires. In: PHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS. 2016 ; Vol. 10, No. 7. pp. 554-557.

Bibtex - Download

@article{c7b8d0a7d5344e78914eabed35bee2ac,
title = "Growth and properties of self-catalyzed (In,Mn)As nanowires",
abstract = "Mn-assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side-walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials.",
keywords = "(In,Mn)As, diluted magnetic semiconductors, molecular beam epitaxy, nanowires",
author = "Alexei Bouravleuv and George Cirlin and Rodion Reznik and Artem Khrebtov and Yuriy Samsonenko and Peter Werner and Ilya Soshnikov and Alexander Savin and Harri Lipsanen",
year = "2016",
month = "7",
day = "1",
doi = "10.1002/pssr.201600097",
language = "English",
volume = "10",
pages = "554--557",
journal = "PHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS",
issn = "1862-6254",
publisher = "Wiley-VCH Verlag",
number = "7",

}

RIS - Download

TY - JOUR

T1 - Growth and properties of self-catalyzed (In,Mn)As nanowires

AU - Bouravleuv, Alexei

AU - Cirlin, George

AU - Reznik, Rodion

AU - Khrebtov, Artem

AU - Samsonenko, Yuriy

AU - Werner, Peter

AU - Soshnikov, Ilya

AU - Savin, Alexander

AU - Lipsanen, Harri

PY - 2016/7/1

Y1 - 2016/7/1

N2 - Mn-assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side-walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials.

AB - Mn-assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side-walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials.

KW - (In,Mn)As

KW - diluted magnetic semiconductors

KW - molecular beam epitaxy

KW - nanowires

UR - http://www.scopus.com/inward/record.url?scp=84978646752&partnerID=8YFLogxK

U2 - 10.1002/pssr.201600097

DO - 10.1002/pssr.201600097

M3 - Article

VL - 10

SP - 554

EP - 557

JO - PHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS

JF - PHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS

SN - 1862-6254

IS - 7

ER -

ID: 6666711