Growth and properties of self-catalyzed (In,Mn)As nanowires

Research output: Contribution to journalArticleScientificpeer-review

Researchers

Research units

  • St. Petersburg State Polytechnical University
  • Max-Planck-Institut für Mikrostrukturphysik
  • Russian Academy of Sciences
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)

Abstract

Mn-assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side-walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials.

Details

Original languageEnglish
Pages (from-to)554-557
Number of pages4
JournalPHYSICA STATUS SOLIDI: RAPID RESEARCH LETTERS
Volume10
Issue number7
Publication statusPublished - 1 Jul 2016
MoE publication typeA1 Journal article-refereed

    Research areas

  • (In,Mn)As, diluted magnetic semiconductors, molecular beam epitaxy, nanowires

ID: 6666711