Growth and phase stabilization of HfO2 thin films by ALD using novel precursors

Research output: Contribution to journalArticleScientificpeer-review

Standard

Growth and phase stabilization of HfO2 thin films by ALD using novel precursors. / Niinistö, Jaakko; Mäntymäki, Miia; Kukli, Kaupo; Costelle, Leila; Puukilainen, Esa; Ritala, Mikko; Leskelä, Markku.

In: Journal of Crystal Growth, Vol. 312, No. 2, 01.01.2010, p. 245-249.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Niinistö, J, Mäntymäki, M, Kukli, K, Costelle, L, Puukilainen, E, Ritala, M & Leskelä, M 2010, 'Growth and phase stabilization of HfO2 thin films by ALD using novel precursors' Journal of Crystal Growth, vol. 312, no. 2, pp. 245-249. https://doi.org/10.1016/j.jcrysgro.2009.10.028

APA

Niinistö, J., Mäntymäki, M., Kukli, K., Costelle, L., Puukilainen, E., Ritala, M., & Leskelä, M. (2010). Growth and phase stabilization of HfO2 thin films by ALD using novel precursors. Journal of Crystal Growth, 312(2), 245-249. https://doi.org/10.1016/j.jcrysgro.2009.10.028

Vancouver

Author

Niinistö, Jaakko ; Mäntymäki, Miia ; Kukli, Kaupo ; Costelle, Leila ; Puukilainen, Esa ; Ritala, Mikko ; Leskelä, Markku. / Growth and phase stabilization of HfO2 thin films by ALD using novel precursors. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 2. pp. 245-249.

Bibtex - Download

@article{685d3e47fe374263be04d95bc288350d,
title = "Growth and phase stabilization of HfO2 thin films by ALD using novel precursors",
abstract = "HfO2 thin films were grown at temperatures between 250 and 400 °C by atomic layer deposition using novel cyclopentadienyl-alkylamido precursors, namely CpHf(NMe2)3 and (CpMe)Hf(NMe2)3 (Cp, cyclopentadienyl=C5H5). Ozone was used as the oxygen source. The self-limiting growth mode was verified at 300 °C with a growth rate of 0.7-0.8 {\AA}/cycle, depending on the precursor. Thermal decomposition started to have an effect on the growth mechanism at temperatures near 350 °C. As compared to the widely applied Hf(NEtMe)4 precursor, these novel precursors with higher thermal stability resulted in HfO2 films with lower impurity contents. The carbon and hydrogen contents below 0.5 and 1.0 at.{\%}, respectively, were characterized for films deposited at 300 °C from both novel precursors. The 50-nm-thick HfO2 films deposited at 300 °C or above were crystallized in mixture of monoclinic and cubic or tetragonal phases. Doping with low amounts of yttrium and subsequent annealing of 7-nm-thick film on TiN stabilized the preferred high-permittivity cubic or tetragonal phases, resulting in low capacitance equivalent thickness and leakage current density.",
keywords = "A3. Atomic layer deposition, A3. Chemical vapor deposition processes, B1. Oxides, B2. Dielectric materials",
author = "Jaakko Niinist{\"o} and Miia M{\"a}ntym{\"a}ki and Kaupo Kukli and Leila Costelle and Esa Puukilainen and Mikko Ritala and Markku Leskel{\"a}",
year = "2010",
month = "1",
day = "1",
doi = "10.1016/j.jcrysgro.2009.10.028",
language = "English",
volume = "312",
pages = "245--249",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "2",

}

RIS - Download

TY - JOUR

T1 - Growth and phase stabilization of HfO2 thin films by ALD using novel precursors

AU - Niinistö, Jaakko

AU - Mäntymäki, Miia

AU - Kukli, Kaupo

AU - Costelle, Leila

AU - Puukilainen, Esa

AU - Ritala, Mikko

AU - Leskelä, Markku

PY - 2010/1/1

Y1 - 2010/1/1

N2 - HfO2 thin films were grown at temperatures between 250 and 400 °C by atomic layer deposition using novel cyclopentadienyl-alkylamido precursors, namely CpHf(NMe2)3 and (CpMe)Hf(NMe2)3 (Cp, cyclopentadienyl=C5H5). Ozone was used as the oxygen source. The self-limiting growth mode was verified at 300 °C with a growth rate of 0.7-0.8 Å/cycle, depending on the precursor. Thermal decomposition started to have an effect on the growth mechanism at temperatures near 350 °C. As compared to the widely applied Hf(NEtMe)4 precursor, these novel precursors with higher thermal stability resulted in HfO2 films with lower impurity contents. The carbon and hydrogen contents below 0.5 and 1.0 at.%, respectively, were characterized for films deposited at 300 °C from both novel precursors. The 50-nm-thick HfO2 films deposited at 300 °C or above were crystallized in mixture of monoclinic and cubic or tetragonal phases. Doping with low amounts of yttrium and subsequent annealing of 7-nm-thick film on TiN stabilized the preferred high-permittivity cubic or tetragonal phases, resulting in low capacitance equivalent thickness and leakage current density.

AB - HfO2 thin films were grown at temperatures between 250 and 400 °C by atomic layer deposition using novel cyclopentadienyl-alkylamido precursors, namely CpHf(NMe2)3 and (CpMe)Hf(NMe2)3 (Cp, cyclopentadienyl=C5H5). Ozone was used as the oxygen source. The self-limiting growth mode was verified at 300 °C with a growth rate of 0.7-0.8 Å/cycle, depending on the precursor. Thermal decomposition started to have an effect on the growth mechanism at temperatures near 350 °C. As compared to the widely applied Hf(NEtMe)4 precursor, these novel precursors with higher thermal stability resulted in HfO2 films with lower impurity contents. The carbon and hydrogen contents below 0.5 and 1.0 at.%, respectively, were characterized for films deposited at 300 °C from both novel precursors. The 50-nm-thick HfO2 films deposited at 300 °C or above were crystallized in mixture of monoclinic and cubic or tetragonal phases. Doping with low amounts of yttrium and subsequent annealing of 7-nm-thick film on TiN stabilized the preferred high-permittivity cubic or tetragonal phases, resulting in low capacitance equivalent thickness and leakage current density.

KW - A3. Atomic layer deposition

KW - A3. Chemical vapor deposition processes

KW - B1. Oxides

KW - B2. Dielectric materials

UR - http://www.scopus.com/inward/record.url?scp=71649086924&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.10.028

DO - 10.1016/j.jcrysgro.2009.10.028

M3 - Article

VL - 312

SP - 245

EP - 249

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -

ID: 28853261