Growth and defects of GaAsN layers on GaAs

Research output: Working paperProfessional

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Details

Original languageEnglish
Place of PublicationHampuri
Pages861-862
Publication statusPublished - 2001
MoE publication typeD4 Published development or research report or study

Publication series

NameHASYLAB-DESY Annual Report 2000, Part I

    Research areas

  • defects, GaAsN, misfit dislocations, MOVPE, x-ray topography

ID: 4132456