Growth and defects of GaAsN layers on GaAs

Research output: Working paperProfessional


  • J. Toivonen
  • T. Tuomi
  • J. Riikonen
  • L. Knuuttila
  • R. Rantamäki
  • M. Sopanen
  • H. Lipsanen
  • P.J. McNally
  • J. Kanatharana
  • W. Chen
  • D. Lowney

Research units


Original languageEnglish
Place of PublicationHampuri
Publication statusPublished - 2001
MoE publication typeD4 Published development or research report or study

Publication series

NameHASYLAB-DESY Annual Report 2000, Part I

    Research areas

  • defects, GaAsN, misfit dislocations, MOVPE, x-ray topography

ID: 4132456