Growth and characterization of InAsN/InAs multi quantum well for infrared device applications

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Growth and characterization of InAsN/InAs multi quantum well for infrared device applications. / Subramaniyam, Nagarajan; Mattila, Päivi; Aierken, Abuduwayiti; Jussila, Henri; Sopanen, Markku; Lipsanen, Harri.

Cost Action MP0805 Meeting, Istanbul, Turkey, 12-13 April, 2010. 2010.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Subramaniyam, N, Mattila, P, Aierken, A, Jussila, H, Sopanen, M & Lipsanen, H 2010, Growth and characterization of InAsN/InAs multi quantum well for infrared device applications. in Cost Action MP0805 Meeting, Istanbul, Turkey, 12-13 April, 2010.

APA

Subramaniyam, N., Mattila, P., Aierken, A., Jussila, H., Sopanen, M., & Lipsanen, H. (2010). Growth and characterization of InAsN/InAs multi quantum well for infrared device applications. In Cost Action MP0805 Meeting, Istanbul, Turkey, 12-13 April, 2010

Vancouver

Subramaniyam N, Mattila P, Aierken A, Jussila H, Sopanen M, Lipsanen H. Growth and characterization of InAsN/InAs multi quantum well for infrared device applications. In Cost Action MP0805 Meeting, Istanbul, Turkey, 12-13 April, 2010. 2010

Author

Subramaniyam, Nagarajan ; Mattila, Päivi ; Aierken, Abuduwayiti ; Jussila, Henri ; Sopanen, Markku ; Lipsanen, Harri. / Growth and characterization of InAsN/InAs multi quantum well for infrared device applications. Cost Action MP0805 Meeting, Istanbul, Turkey, 12-13 April, 2010. 2010.

Bibtex - Download

@inproceedings{ec4d53f0edca401f90d3c22e3fdd6615,
title = "Growth and characterization of InAsN/InAs multi quantum well for infrared device applications",
keywords = "dilute nitride, infrared region, metalorganic vapor phase epitaxy (MOVPE), dilute nitride, infrared region, metalorganic vapor phase epitaxy (MOVPE), dilute nitride, infrared region, metalorganic vapor phase epitaxy (MOVPE)",
author = "Nagarajan Subramaniyam and P{\"a}ivi Mattila and Abuduwayiti Aierken and Henri Jussila and Markku Sopanen and Harri Lipsanen",
year = "2010",
language = "English",
booktitle = "Cost Action MP0805 Meeting, Istanbul, Turkey, 12-13 April, 2010",

}

RIS - Download

TY - GEN

T1 - Growth and characterization of InAsN/InAs multi quantum well for infrared device applications

AU - Subramaniyam, Nagarajan

AU - Mattila, Päivi

AU - Aierken, Abuduwayiti

AU - Jussila, Henri

AU - Sopanen, Markku

AU - Lipsanen, Harri

PY - 2010

Y1 - 2010

KW - dilute nitride

KW - infrared region

KW - metalorganic vapor phase epitaxy (MOVPE)

KW - dilute nitride

KW - infrared region

KW - metalorganic vapor phase epitaxy (MOVPE)

KW - dilute nitride

KW - infrared region

KW - metalorganic vapor phase epitaxy (MOVPE)

M3 - Conference contribution

BT - Cost Action MP0805 Meeting, Istanbul, Turkey, 12-13 April, 2010

ER -

ID: 554977