Growth and characterization of InAsN/InAs multi quantum well for infrared device applications

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Original languageEnglish
Title of host publicationCost Action MP0805 Meeting, Istanbul, Turkey, 12-13 April, 2010
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication

    Research areas

  • dilute nitride, infrared region, metalorganic vapor phase epitaxy (MOVPE)

ID: 554977