Growth and characterization of doped A1xGa1-x As layers

M. Tuominen

    Research output: Working paperProfessional

    Original languageEnglish
    Place of PublicationEspoo
    Pages23-25
    Publication statusPublished - 1993
    MoE publication typeD4 Published development or research report or study

    Publication series

    NameOptoelectronics Laboratory, Helsinki University of Technology
    No.TKK-F-C148

    Keywords

    • molecular beam epitaxy (MBE)
    • semiconductors

    Cite this