Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses

H.K. Lipsanen; V.M. Airaksinen

doi:10.1007/BF02671231

Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	465-470
Number of pages	6
Journal	Journal of Electronic Materials
Volume	23
Issue number	5
DOIs	https://doi.org/10.1007/BF02671231
Publication status	Published - May 1994
MoE publication type	A1 Journal article-refereed

Keywords

superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance

Access to Document

10.1007/BF02671231

Cite this

@article{c4b304f0225748708c1951f5e64be4ce,

title = "Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses",

keywords = "superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance, superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance, superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance",

author = "H.K. Lipsanen and V.M. Airaksinen",

year = "1994",

month = may,

doi = "10.1007/BF02671231",

language = "English",

volume = "23",

pages = "465--470",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "5",

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TY - JOUR

T1 - Growth and Characterization of a GaAs/AlAs Superlattice with Variable Layer Thicknesses

AU - Lipsanen, H.K.

AU - Airaksinen, V.M.

PY - 1994/5

Y1 - 1994/5

KW - superlattice, GaAs, AlAs, molecular beam epitaxy, photoreflectance

U2 - 10.1007/BF02671231

DO - 10.1007/BF02671231

M3 - Article

SN - 0361-5235

VL - 23

SP - 465

EP - 470

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -