Growth and characterisation of InGaN/GaN multi-quantum wells on etched c- and a-plane GaN nanopillars

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Original languageEnglish
Title of host publication17th International Conference on Metalorganic Vapor Phase Epitaxy, Lausanne, Switzerland, July 13-18, 2014
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication

ID: 554796