Growth and characterisation of InGaN/GaN multi-quantum wells on etched c- and a-plane GaN nanopillars

Nagarajan Subramaniyam, Olli Svensk, P. Amit, Ali Shah, Azizur Rahman, Carina B. Maliakkal, Arnab Bhattacharya, Harri Lipsanen, Markku Sopanen

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Original languageEnglish
Title of host publication17th International Conference on Metalorganic Vapor Phase Epitaxy, Lausanne, Switzerland, July 13-18, 2014
Place of PublicationSwitzerland
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication

Cite this

Subramaniyam, N., Svensk, O., Amit, P., Shah, A., Rahman, A., Maliakkal, C. B., ... Sopanen, M. (2014). Growth and characterisation of InGaN/GaN multi-quantum wells on etched c- and a-plane GaN nanopillars. In 17th International Conference on Metalorganic Vapor Phase Epitaxy, Lausanne, Switzerland, July 13-18, 2014 Switzerland.