Graphene oxide reduction by solid-state laser irradiation for bolometric applications
Research output: Contribution to journal › Article
- Skolkovo Institute of Science and Technology
- National Research University of Electronic Technology
We present a method for reduced graphene oxide (GO) patterning on the surface of GO film by a 445 nm solid-state laser with the adjustable fluence from 0.2-20 kJ cm-2. We demonstrate that the optimal argon concentration in air to obtain good quality reduced GO films is 90%. Varying the laser irradiation energy density allows controlling the resistance and I G/I D and I G/I 2D ratios of Raman peak intensities. As a result, we demonstrate the possibility of forming of conductive patterns with a sheet resistance of 189 Ohm/□ and ∼1 μm film thickness by a local reduction of the GO. The fabricated structures reveal excellent bolometric response with a high speed and sensitivity to the radiation in the visible wavelength region.
|Publication status||Published - 19 Jan 2018|
|MoE publication type||A1 Journal article-refereed|
- bolometer application, graphene oxide reduction, Raman spectroscopy, solid-state laser patterning