Graphene oxide reduction by solid-state laser irradiation for bolometric applications

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • Vladislav A. Kondrashov
  • Nikolay S. Struchkov
  • Roman Yu Rozanov
  • Vladimir K. Nevolin
  • Daria S. Kopylova
  • Albert Nasibulin

Research units

  • Skolkovo Institute of Science and Technology
  • National Research University of Electronic Technology

Abstract

We present a method for reduced graphene oxide (GO) patterning on the surface of GO film by a 445 nm solid-state laser with the adjustable fluence from 0.2-20 kJ cm-2. We demonstrate that the optimal argon concentration in air to obtain good quality reduced GO films is 90%. Varying the laser irradiation energy density allows controlling the resistance and I G/I D and I G/I 2D ratios of Raman peak intensities. As a result, we demonstrate the possibility of forming of conductive patterns with a sheet resistance of 189 Ohm/□ and ∼1 μm film thickness by a local reduction of the GO. The fabricated structures reveal excellent bolometric response with a high speed and sensitivity to the radiation in the visible wavelength region.

Details

Original languageEnglish
Article number035301
JournalNanotechnology
Volume29
Issue number3
Publication statusPublished - 19 Jan 2018
MoE publication typeA1 Journal article-refereed

    Research areas

  • bolometer application, graphene oxide reduction, Raman spectroscopy, solid-state laser patterning

ID: 16790377