Graphene on silicon carbide as a basis for gas- and biosensor applications

Research output: Contribution to journalArticleScientificpeer-review

Researchers

  • S. P. Lebedev
  • V. Yu Davydov
  • D. Yu. Usachov
  • A. N. Smirnov
  • V. S. Levitskii
  • I. A. Eliseyev
  • E. V. Guschina
  • M. S. Dunaevskiy
  • O. Yu. Vilkov
  • A. G. Rybkin
  • A. A. Lebedev
  • S. N. Novikov
  • Yu N. Makarov

Research units

  • RAS - Ioffe Physico Technical Institute
  • St. Petersburg State University
  • Nitride Crystals Inc.
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)

Abstract

The structural, chemical, and electronic characteristics of graphene grown by thermal decomposition of a singlecrystal SiC substrate in Ar atmosphere are presented. It is shown that this technology allows the creation of high-quality monolayer graphene films with a small fraction of bilayer graphene inclusions. The performance of graphene on SiC as a gas sensor or a biosensor was tested. The sensitivity of gas sensors to NO2 on the order of 1 ppb and that of biosensors to fluorescein with concentration on the order of 1 ng/mL and to bovine serum albumin-fluorescein conjugate with concentration on the order of 1 ng/mL were determined.

Details

Original languageEnglish
Pages (from-to)95-97
JournalNanosystems: Physics, Chemistry, Mathematics
Volume9
Issue number1
Publication statusPublished - 2018
MoE publication typeA1 Journal article-refereed

    Research areas

  • graphene, silicon carbide, thermal decomposition, Raman spectroscopy, AFM, XPS, ARPES

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